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Consider an inversion-mode sol NMOS device with an N+ poly-gate, a channel length and a channel width of , a front gate oxide of , a buried oxide of , and a silicon thin-film thickness of doped with a p-type density of 5 x 1016cm-3. If the device is biased at VDS = 0.1 V and VGS switches from OV (turn-off) to 3V (turn-on) suddenly, (a) What is the change in the electrostatic potential at the front oxide/silicon thin-film interface? (b) If at the turn-on the device, holes cannot be evacuated in time, the electrostatic potential in the silicon thin-film stays unchanged. At this moment, the potential difference between the body and the source is identical to the result in (a). Compute the effective threshold voltage at this moment. (c) From (b), compute IDS at the sudden turn-on with the floating body and with the body grounded. (d) If the silicon thin-film doping density becomes 1017cm-3 and 2 x 1016cm-3, repeat (a)-(c).
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